Thus the formation of such ribbons is energetically favorable. The binding energy created by the passivation of Nitrogen molecule (N 2) on unpassivated zigzag GNR is always positive. In this paper we present a study on N (Nitrogen) terminated zigzag GNR FET. selective doping, edge modulation (defective boundaries and edge disorder), , enabling each edge Carbon (C) atom to two Hydrogen (H) atoms, terminating the edge C atoms of the ribbon by Nitrogen (N) atoms. Various methods have been reported to open a band gap in zigzag GNR e.g. Such a technique of fabricating GNRs has been proposed and this opens way for GNR to be used in future high-performance electronics applications. Fabrication of GNRs requires atomically precise edges. Arm chair type GNR has been used to simulate various high frequency GNR FETs.
This band gap is not sufficient for Graphene to be used in digital logical applications. The induced band gap depends upon the width of the ribbon. Confining Graphene in one direction results in zigzag type GNR which shows metallic properties due to wave function localization at the zigzag edges and confining Graphene in other direction results in Arm chair type GNR which shows semiconducting properties due to both quantum confinement and the edge states. These nanostructures are called Graphene Nano Ribbon (GNR). However, formation of Graphene nanostructure of less than 10 nm can induce a band gap.
Graphene, being a zero band gap material, is not suitable for semiconductor electronics to fabricate FETs. This includes ultrahigh carrier mobility, thermal conductivity, electron–hole symmetry and quantum hall effect. Graphene, a two dimensional honey comb layer of carbon atoms in which carbon atoms form three σ bonds in the plane of Graphene in sp 2 configuration while another orbital p z, which is perpendicular to the Graphene plane makes π covalent bond, has shown the capability to become the novel material for nano-electronics because of its extraordinary properties. The continuous miniaturization of Si devices based on CMOS technology is reaching its physical and geometrical limits so we are moving on other materials.